Acid Chemical Etching for Ge-In Alloyed Junction Element
نویسندگان
چکیده
منابع مشابه
Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique
A Ge Esaki diode is demonstrated on Si atop a coalesced epitaxial layer of Ge grown through narrow openings in SiO2 that are used to trap threading dislocations from the lattice mismatch. Spin-on doping was used to form the n-type junction and a controlled alloyed reaction of Al and Ge forms the p-type junction. At an alloy temperature of 5808C for 1 s, the Ge-on-Si diodes were found to have a ...
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ژورنال
عنوان ژورنال: Journal of the Metal Finishing Society of Japan
سال: 1969
ISSN: 1884-3395,0026-0614
DOI: 10.4139/sfj1950.20.396